15 results
Planar oxidation of strained silicon substrates
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- Journal:
- Journal of Materials Research / Volume 16 / Issue 3 / March 2001
- Published online by Cambridge University Press:
- 26 November 2012, pp. 728-733
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- March 2001
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Stress Effects in the Oxidation of Planar SiO2 Thin Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 594 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 175
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- 1999
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Excess Vacancy Generation by Silicide Formation in Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 594 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 151
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- 1999
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Study of Point Defect Concentrations During the Fluorinated Oxidation of Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 71
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- 1997
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Effect of Fluorine on the Dopant Diffusion of Through-Oxtoe Implanted Boron in Si - a Correlation with Microstructural Defects
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- Journal:
- MRS Online Proceedings Library Archive / Volume 262 / 1992
- Published online by Cambridge University Press:
- 03 September 2012, 573
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- 1992
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Stress Dependent Electrical Activation of Implanted Si IN GaAs - A Four Point Bending Study
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- Journal:
- MRS Online Proceedings Library Archive / Volume 226 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 157
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- 1991
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Effect of Recoil Implantation of Oxygen on Boron Enhanced Diffusion in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 147 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 79
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- 1989
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The Ion Implanted Arsenic Tail in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 147 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 73
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- 1989
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A Study of the Ion Implanted Arsenic Tail in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 104 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 219
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- 1987
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The Effect of Window Edge Stress on Dopant Diffusion in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 76 / 1986
- Published online by Cambridge University Press:
- 25 February 2011, 277
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- 1986
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The Behavior of Oxidation Stacking Faults During O2/NF3 Oxidation of Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 82 / 1986
- Published online by Cambridge University Press:
- 26 February 2011, 423
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- 1986
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Study of “Reverse Annealing” of Boron Under Low Temperature Lamp Anneals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 52 / 1985
- Published online by Cambridge University Press:
- 26 February 2011, 57
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- 1985
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Effect of Heavy Doping on the Nucleation and Growth of Bulk Stacking Faults in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 36 / 1984
- Published online by Cambridge University Press:
- 21 February 2011, 231
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- 1984
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Diffusion of Dopants in (111) Silicon During High Temperature Heat Treatment in Nitrogen
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- Journal:
- MRS Online Proceedings Library Archive / Volume 36 / 1984
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- 21 February 2011, 83
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- 1984
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Oxygen Precipitation Effects in Degenerately – Doped Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 14 / 1982
- Published online by Cambridge University Press:
- 15 February 2011, 181
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- 1982
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